The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2013
Filed:
Apr. 07, 2010
Applicants:
Alexander Lidow, Marina Del Ray, CA (US);
Robert Beach, La Crescenta, CA (US);
Guang Y. Zhao, Torrance, CA (US);
Jianjun Cao, Torrance, CA (US);
Inventors:
Alexander Lidow, Marina Del Ray, CA (US);
Robert Beach, La Crescenta, CA (US);
Guang Y. Zhao, Torrance, CA (US);
Jianjun Cao, Torrance, CA (US);
Assignee:
Efficient Power Conversion Corporation, El Segundo, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/102 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
An enhancement-mode GaN transistor, the transistor having a substrate, transition layers, a buffer layer comprised of a III Nitride material, a barrier layer comprised of a III Nitride material, drain and source contacts, a gate containing acceptor type dopant elements, and a diffusion barrier comprised of a III Nitride material between the gate and the buffer layer.