The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Jan. 31, 2012
Alexander Lidow, Marina Del Ray, CA (US);
Jianjun Cao, Torrance, CA (US);
Robert Beach, La Crescenta, CA (US);
Robert Strittmatter, La Canada, CA (US);
Guang Y. Zhao, Torrance, CA (US);
Alana Nakata, Redondo Beach, CA (US);
Alexander Lidow, Marina Del Ray, CA (US);
Jianjun Cao, Torrance, CA (US);
Robert Beach, La Crescenta, CA (US);
Robert Strittmatter, La Canada, CA (US);
Guang Y. Zhao, Torrance, CA (US);
Alana Nakata, Redondo Beach, CA (US);
Efficient Power Conversion Corporation, El Segundo, CA (US);
Abstract
A self-aligned transistor gate structure that includes an ion-implanted portion of gate material surrounded by non-implanted gate material on each side. The gate structure may be formed, for example, by applying a layer of GaN material over an AlGaN barrier layer and implanting a portion of the GaN layer to create the gate structure that is laterally surrounded by the GaN layer.