Tokyo, Japan

Akira Muto

This inventor holds 29 USPTO granted patents and 3 published patent applications and 2 EPO patents, primarily in Semiconductor Devices. Top assignees: Renesas Electronics Corporation, Renesas Technology Corp., Sony Corporation. Active years: 2006-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Akira Muto. Retrieved from https://idiyas.com/inventor/akira-muto

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 29 

% Patents Active = 55.2


Average Co-Inventor Count = 3.0

ph-index = 9

Forward Citations = 162(Granted Patents)


Location History:

  • Haruna, JP (2006 - 2008)
  • Kanagawa, JP (2015 - 2019)
  • Tokyo, JP (2007 - 2020)

Company Filing History:


Years Active: 2006-2020

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Areas of Expertise:
Insulated Gate Bipolar Transistor
Diode
Flexible Printed Circuit Board
High-Frequency Module
Balun Transformer
Optical Transmitter Receiver
Resin-Sealed Semiconductor
DC-DC Converter
Manufacturing Method
Electronic Apparatus
Semiconductor Chip
Dielectric Filter
29 patents (USPTO):Explore Patents

Title: Akira Muto: Innovator in Semiconductor Technology

Introduction

Akira Muto, an accomplished inventor based in Tokyo, Japan, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 29 patents, he has established himself as a key figure in developing advanced electronic devices that enhance performance and efficiency.

Latest Patents

Among his most recent patents are innovations that focus on semiconductor devices and electronic apparatuses. The first patent describes a semiconductor device and electronic apparatus that incorporates semiconductor chips, featuring an insulated gate bipolar transistor (IGBT) and a diode. This electronic apparatus comprises a wiring board with a main surface where both the first and second semiconductor devices are mounted. Each device contains semiconductor chips connected through leads, designed to improve electric performance.

Another notable patent is dedicated to enhancing semiconductor devices that support larger currents. In this design, the emitter terminal protrudes from one side of the sealing body while the signal terminals protrude from the opposing side. This configuration aims to optimize the layout and functionality of the semiconductor device, providing improved operational efficiency.

Career Highlights

Akira Muto has worked with renowned organizations, including Renesas Electronics Corporation and Renesas Technology Corp. His tenure at these companies has shaped his expertise and allowed him to contribute extensively to the semiconductor landscape. Muto's inventions often focus on improving device performance, paving the way for more robust electronic systems.

Collaborations

Throughout his career, Akira Muto has collaborated with several talented professionals, including Nobuya Koike and Yukihiro Sato. These partnerships have fostered a creative environment that enhances innovation and drives advancements in semiconductor technology.

Conclusion

Akira Muto's dedication to innovation in semiconductor technology is evident through his numerous patents and collaborative efforts. His work continues to influence the industry, setting new standards for electronic devices. As technology progresses, Muto's contributions will undoubtedly play a crucial role in shaping the future of electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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