The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2019

Filed:

May. 11, 2018
Applicant:

Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;

Inventors:

Akira Muto, Kanagawa, JP;

Nobuya Koike, Kanagawa, JP;

Masaki Kotsuji, Kanagawa, JP;

Yukihiro Narita, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 23/538 (2006.01); H01L 23/495 (2006.01); H01L 23/00 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/48 (2006.01); H01L 23/552 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7393 (2013.01); H01L 23/49537 (2013.01); H01L 23/49551 (2013.01); H01L 23/49575 (2013.01); H01L 23/538 (2013.01); H01L 24/36 (2013.01); H01L 24/37 (2013.01); H01L 24/40 (2013.01); H01L 29/66348 (2013.01); H01L 29/7397 (2013.01); H01L 29/7805 (2013.01); H01L 29/7813 (2013.01); H01L 21/4842 (2013.01); H01L 23/49541 (2013.01); H01L 23/49562 (2013.01); H01L 23/552 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/371 (2013.01); H01L 2224/37011 (2013.01); H01L 2224/37147 (2013.01); H01L 2224/40095 (2013.01); H01L 2224/40137 (2013.01); H01L 2224/40139 (2013.01); H01L 2224/40245 (2013.01); H01L 2224/8385 (2013.01); H01L 2224/83801 (2013.01); H01L 2224/8485 (2013.01); H01L 2224/84801 (2013.01); H01L 2924/12036 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01);
Abstract

A semiconductor device and an electronic device are improved in performances by supporting a large current. An emitter terminal protrudes from a first side of a sealing body, and signal terminals protrude from a second sides of the sealing body. Namely, the side of the sealing body from which the emitter terminal protrudes and the side of the sealing body from which the signal terminals protrude are different. More particularly, the signal terminals protrude from the side of the sealing body opposite the side thereof from which the emitter terminal protrudes. Further, a second semiconductor chip including a diode formed therein is mounted over a first surface of a chip mounting portion in such a manner as to be situated between the emitter terminal and the a first semiconductor chip including an IGBT formed therein in plan view.


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