Renesas Electronics Corporation

Sony Corporation

Renesas Technology Corp.

Ssd Company Limited

Renesas Esatern Japan Semiconductor, Inc.

Akira Muto

Nobuya Koike

Yukihiro Sato

Ichio Shimizu

Katsuo Arai

Koji Bando

Hiroshi Sato

Keiichi Okawa

Takuya Nakajo

Hidemasa Kagii

Hiroyuki Nakamura

Masahiko Osaka

Masaki Kotsuji

Yukihiro Narita

Toshiyuki Hata

Tsuyoshi Ogawa

Akihiko Okubora

Atsushi Nishikizawa

Ryo Kanda

Kazuhiro Mitamura

Takamitsu Kanazawa

Hiroi Oka

Katsuhiko Funatsu

Norio Kido

Takahiko Kosemura

Atsushi Fujiki

Tomokazu Tanaka

Osamu Ikeda

Naotaka Tanaka

Yukihiro Satou

Yuichi Machida

Hiromu Ueshima

Kisho Ashida

Masahide Okamoto

Masaki Tamura

Tomio Yamada

Hirokazu Nakajima

Tsuneo Endoh

Nae Hisano

Kenya Kawano

Satoru Konishi

Katsuo Ishizaka

Tsutomu Ida

Mamoru Ito

Tetsuo Iljima

Kazuaki Uehara

Takafumi Furukawa

Koji Odaira

An electronic apparatus includes a wiring board including a main surface on which a first wiring and a second wiring are formed, a first semiconductor device mounted on the main surface of the wiring board, and a second semiconductor device mounted on the main surface of the wiring board. Each of the first semiconductor device and the second semiconductor device includes a first semiconductor chip including an insulated gate bipolar transistor, a second semiconductor chip including a diode, a first lead electrically connected to an emitter electrode pad formed on a first front surface of the first semiconductor chip, a second lead electrically connected to an anode electrode pad formed on a second front surface of the second semiconductor chip, and a first terminal electrically connected to a collector electrode formed on a first back surface of the first semiconductor chip.

Semiconductor device and electronic apparatus including semiconductor chips including an insulated gate bipolar transistor and a diode

A semiconductor device and an electronic device are improved in performances by supporting a large current. An emitter terminal protrudes from a first side of a sealing body, and signal terminals protrude from a second sides of the sealing body. Namely, the side of the sealing body from which the emitter terminal protrudes and the side of the sealing body from which the signal terminals protrude are different. More particularly, the signal terminals protrude from the side of the sealing body opposite the side thereof from which the emitter terminal protrudes. Further, a second semiconductor chip including a diode formed therein is mounted over a first surface of a chip mounting portion in such a manner as to be situated between the emitter terminal and the a first semiconductor chip including an IGBT formed therein in plan view.

Semiconductor device and an electronic device

For example, a semiconductor device capable of achieving a high performance applicable to an SR motor is provided. The semiconductor device includes a chip mounting portion TABon which a semiconductor chip CHPhaving an IGBT is mounted, and a chip mounting portion TABon which a semiconductor chip CHPhaving a diode is formed. The semiconductor device also includes a lead LDA electrically connected to an emitter electrode pad EP of the semiconductor chip CHPvia a clip CLP, and a lead LDB electrically connected to an anode electrode pad ADP of the semiconductor chip CHPvia a clip CLP. At this time, the chip mounting portion TABis separated electrically from the chip mounting portion TAB, and the clip CLPis separated electrically from the clip CLP

Semiconductor device and electronic apparatus including a first semiconductor chip including an insulated gate bipolar transistor and a second semiconductor chip including a diode

On the assumption that a pair of hanging parts is provided in a lead frame and a clip includes a main body part and a pair of extension parts, the pair of the extension parts is mounted and supported on the pair of the hanging parts. Accordingly, the clip is mounted on a lead (one point) and the pair of the hanging parts (two points), and the clip is supported by the three points.

Semiconductor device and manufacturing method thereof

Each of first and second semiconductor devices mounted on a substrate includes an emitter terminal electrically connected with a front surface electrode of a semiconductor chip and exposed from a main surface of a sealing body located on a front surface side of the semiconductor chip. Each of the first and second semiconductor devices includes a collector terminal electrically connected with a back surface electrode of the semiconductor chip and exposed from the main surface of the sealing body located on a back surface side of the semiconductor chip. The collector terminal of the first semiconductor device is electrically connected with the emitter terminal of the second semiconductor device via a conductor pattern formed on an upper surface of the substrate.

Electronic device

To improve the reliability of a semiconductor device. A chip mounting portion TABis arranged to be shifted to the +x direction side. Further, a gate electrode pad of a semiconductor chip CHP(LV) and a pad of a semiconductor chip CHPare electrically coupled by a wire Wand a wire Wthrough a relay lead RL. Likewise, a gate electrode pad of a semiconductor chip CHP(LW) and the pad of the semiconductor chip CHPare electrically coupled by a wire Wand a wire Wthrough a relay lead RL. At this time, the structures of parts of the relay leads RLand RL, which are exposed from a sealing body MR are different from the structures of respective parts exposed from the sealing body MR, of a plurality of leads LDand LDwhich function as external terminals.

Semiconductor device

An improvement is achieved in the performance of an electronic device. A first semiconductor device and a second semiconductor device are mounted over the upper surface of a wiring board such that, e.g., in plan view, the orientation of the second semiconductor device intersects the orientation of the first semiconductor device. That is, the first semiconductor device is mounted over the upper surface of the wiring board such that a first emitter terminal and a first signal terminal are arranged along an x-direction in which the pair of shorter sides of the wiring board extend. On the other hand, the second semiconductor device is mounted over the upper surface of the wiring board such that a second emitter terminal and a second signal terminal are arranged along a y-direction in which the pair of longer sides of the wiring board extend.

A semiconductor chip in which a power MOSFET is placed above a semiconductor chip in which another power MOSFET is formed and they are sealed with an encapsulation resin. The semiconductor chips are so arranged that the upper semiconductor chip does not overlap with a gate pad electrode of the lower semiconductor chip in a plan view. The semiconductor chips are identical in size and the respective source pad electrodes and gate pad electrodes of the lower semiconductor chip and the upper semiconductor chip are identical in shape and arrangement. The lower semiconductor chip and the upper semiconductor chip are arranged with their respective centers displaced from each other. Accordingly, the size of a semiconductor device can be reduced.

Semiconductor device for a DC-DC converter

To prevent, in a resin-sealed type semiconductor package, generation of cracks in a die bonding material used for mounting of a semiconductor chip. A semiconductor chip is mounted over the upper surface of a die pad via a die bonding material, followed by sealing with an insulating resin. The top surface of the die pad to be brought into contact with the insulating resin is surface-roughened, while the bottom surface of the die pad and an outer lead portion are not surface-roughened.

A semiconductor device is provided, which is capable of improving mounting flexibility relatively and increasing general versatility, as well as realizing heat radiation characteristics and low on-resistance. Moreover, the semiconductor device is provided, which is capable of improving reliability, performing processing in manufacturing processes easily and reducing manufacturing costs. Also, the semiconductor device capable of decreasing the mounting area is provided. A semiconductor chip in which an IGBT is formed and a semiconductor chip in which a diode is formed are mounted over a die pad. Then, the semiconductor chip and the semiconductor chip are connected by using a clip. The clip is arranged so as not to overlap with bonding pads formed at the semiconductor chip in a flat state. The bonding pads formed at the semiconductor chip are connected to electrodes by using wires.

Semiconductor device and method of manufacturing the same

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Tokyo, Japan

Akira Muto