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Semiconductor Process Laboratory Co., Ltd.

USPTO Granted Patents = 33

% Expired Patents = 15.2

Forward Citations = 1,103

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25 inventors (with patents filed for the assignee):

Kazuo Maeda (28 out of 88 patents)

Noboru Tokumasu (13 out of 23 patents)

Kouichi Ohira (7 out of 17 patents)

4. Yoshimi Shioya (5 out of 17 patents)

5. Yuko Nishimoto (5 out of 7 patents)

6. Setsu Suzuki (4 out of 6 patents)

7. Yoshiaki Yuyama (4 out of 5 patents)

8. Yuhko Nishimoto (3 out of 10 patents)

9. Hiroshi Chino (3 out of 3 patents)

10. Mitsuo Hirose (3 out of 3 patents)

11. Junichi Aoki (2 out of 11 patents)

12. Tomomi Suzuki (2 out of 13 patents)

13. Yuichiro Kotake (2 out of 5 patents)

14. Hiroshi Ikakura (2 out of 18 patents)

15. Shoji Ohgawara (2 out of 6 patents)

Core Competencies:

Semiconductor Device

Film Formation

Plasma Processing

Epitaxial Growth

Low Dielectric Constant

Surface Reforming

CVD Film

Impurity Region

Semiconductor Fabrication

Insulating Film

Deposition Method

Manufacturing Equipment

33 patents: Sort by Forward Citations

1. 7329612 - Semiconductor device and process for producing the same (2008-02-12),

2. 7238629 - Deposition method, method of manufacturing semiconductor device, and semiconductor device (2007-07-03),

3. 7132171 - Low dielectric constant insulating film and method of forming the same (2006-11-07),

4. 6911405 - Semiconductor device and method of manufacturing the same (2005-06-28),

5. 6900144 - Film-forming surface reforming method and semiconductor device manufacturing method (2005-05-31),

6. 6852651 - Semiconductor device and method of manufacturing the same (2005-02-08),

7. 6514884 - Method for reforming base surface, method for manufacturing semiconductor device and equipment for manufacturing the same (2003-02-04),

8. 6352943 - Method of film formation and method for manufacturing semiconductor device (2002-03-05),

9. 6207537 - Method for formation of impurity region in semiconductor layer and apparatus for introducing impurity to semiconductor layer (2001-03-27),

10. 6133162 - Method of forming a film by using plasmanized process gas containing (2000-10-17),

11. 6133160 - Method for reforming undercoating surface and method for production of (2000-10-17),

12. 6124210 - Method of cleaning surface of substrate and method of manufacturing (2000-09-26),

13. 6110814 - Film forming method and semiconductor device manufacturing method (2000-08-29),

14. 6110290 - Method for epitaxial growth and apparatus for epitaxial growth (2000-08-29),

15. 5952157 - Method for removal of resist film and method for production of (1999-09-14),

Semiconductor Process Laboratory Co., Ltd. is a prominent entity in the semiconductor industry, specializing in the development and manufacturing of advanced semiconductor processes and technologies. The company focuses on enhancing the efficiency and performance of semiconductor devices, catering to a diverse range of applications in electronics and telecommunications. Based in Chiba, Japan, it plays a crucial role in the innovation and advancement of semiconductor solutions, contributing to the global technology landscape.

Profile summary based on public USPTO records.

Company Badge

USPTO Data Jan 1 1976 - Oct 6 2026

33 Patents

#29 in Chiba

#2,201 in Japan

#20,130 in the World

Semiconductor Process Laboratory Co., Ltd.

Forward Citations = 1,103

25 inventors:

Kazuo Maeda (28 out of 88 patents)

Noboru Tokumasu (13 out of 23 patents)

Kouichi Ohira (7 out of 17 patents)

4. Yoshimi Shioya (5 out of 17 patents)

5. Yuko Nishimoto (5 out of 7 patents)

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