The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2000
Filed:
Jun. 11, 1998
Applicant:
Inventors:
Hiroshi Komiyama, Tokyo, JP;
Kouji Tsukamoto, Mitaka, JP;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438761 ; 438907 ;
Abstract
This invention is directed to a method for the reform of an undercoating surface prior to the formation of a prospective film by the CVD technique using a reaction gas containing an ozone-containing gas having ozone contained in oxygen and TEOS. This method comprises the steps of forming an undercoating insulating film on a substrate by the use of a mixed gas consisting of an ozone-containing gas having ozone contained in oxygen in a concentration of not less than 4% and a first silicon-containing gas, and reforming the surface of said undercoating insulating film by exposing said surface to a second silicon-containing gas.