The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
Oct. 02, 2001
Yoshimi Shioya, Tokyo, JP;
Yuichiro Kotake, Tokyo, JP;
Tomomi Suzuki, Tokyo, JP;
Hiroshi Ikakura, Tokyo, JP;
Kazuo Maeda, Tokyo, JP;
Yoshimi Shioya, Tokyo, JP;
Yuichiro Kotake, Tokyo, JP;
Tomomi Suzuki, Tokyo, JP;
Hiroshi Ikakura, Tokyo, JP;
Kazuo Maeda, Tokyo, JP;
Abstract
The present invention relates to a semiconductor device in which an interlayer insulating film having a low dielectric constant is formed by covering wiring primarily made of a copper film, and to a method of manufacturing the same. In manufacturing the semiconductor device an insulating film having a low dielectric constant is formed on a substrate by converting a film-forming gas into a plasma for reaction. The method includes forming a low-pressure insulating film on the substrate by coverting the film-forming gas at a first gas pressure into a plasma and forming a high-pressure insulating film on the low-pressure insulating film by converting the film-forming gas at second gas pressure, higher than the first gas pressure, into a plasma and reaction.