The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2008
Filed:
Oct. 20, 2003
Yoshimi Shioya, Chiba, JP;
Yuhko Nishimoto, Chiba, JP;
Kazuo Maeda, Chiba, JP;
Semiconductor Process Laboratory Co., Ltd., Chiba, JP;
Abstract
A semiconductor device is manufactured by the steps of generating a film forming gas by setting a flow rate ratio of HO to any one of a silicon-contained organic compound having a siloxane bond and a silicon-contained organic compound having a CHgroup to 4 or more and adjusting a gas pressure to 1.5 Torr or more, applying a power to the film forming gas to generate a plasma thereof so as to react it, and thus forming a low-dielectric insulating film () on a substrate (), plasmanizing a process gas containing at least any one of He, Ar, Hor deuterium, and bringing the low-dielectric insulating film () into contact with the plasma of the process gas.