The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2005
Filed:
Nov. 20, 2001
Yoshimi Shioya, Tokyo, JP;
Kouichi Ohira, Tokyo, JP;
Kazuo Maeda, Tokyo, JP;
Tomomi Suzuki, Tokyo, JP;
Youichi Yamamoto, Tokyo, JP;
Yuichiro Kotake, Tokyo, JP;
Hiroshi Ikakura, Tokyo, JP;
Shoji Ohgawara, Tokyo, JP;
Yoshimi Shioya, Tokyo, JP;
Kouichi Ohira, Tokyo, JP;
Kazuo Maeda, Tokyo, JP;
Tomomi Suzuki, Tokyo, JP;
Youichi Yamamoto, Tokyo, JP;
Yuichiro Kotake, Tokyo, JP;
Hiroshi Ikakura, Tokyo, JP;
Shoji Ohgawara, Tokyo, JP;
Abstract
A process gas consisting of one of N, NO or a mixture thereof is converted to a plasma and then a surface of a copper wiring layer is exposed to the plasma of the process gas, whereby a surface portion of the copper wiring layer is reformed and made into a copper diffusion preventing barrier. According to this method, a noble semiconductor device can be provided having increased operational speed and less copper diffusion.