The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2006
Filed:
May. 18, 2004
Applicants:
Toshiyuki Ohdaira, Ibaraki, JP;
Yoshimi Shioya, Chiba, JP;
Inventors:
Toshiyuki Ohdaira, Ibaraki, JP;
Yoshimi Shioya, Chiba, JP;
Assignees:
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Semiconductor Process Laboratory Co., Ltd., Ichikawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 25/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention relates to a method of forming a low dielectric constant insulating film. Its constitution has the steps of: (a) forming an insulating film containing Si—CHbond in the skeleton of Si—O—Si on a substrate; (b) irradiating ultraviolet ray to the insulating film in reduced-pressure atmosphere to break CHgroups from Si—CHbond in the insulating film; and (c) ejecting the broken CHgroups from the insulating film.