For the Inventor, By the Inventor

Enter assignee name

Mitsubishi Materials Silicon Corporation

USPTO Granted Patents = 51

EPO Patents = 2

Forward Citations = 815

Loading Chart...

Loading Chart...

96 inventors (with patents filed for the assignee):

Hisashi Furuya (15 out of 21 patents)

Takashi Atami (8 out of 12 patents)

Keisei Abe (6 out of 8 patents)

4. Hiroaki Taguchi (5 out of 14 patents)

5. Michio Kida (5 out of 18 patents)

6. Hiroyuki Shiraki (4 out of 8 patents)

7. Norihisa Machida (4 out of 5 patents)

8. Yoji Suzuki (3 out of 25 patents)

9. Takaaki Shiota (3 out of 8 patents)

10. Kazuhiro Ikezawa (3 out of 4 patents)

11. Kazutaka Terashima (3 out of 25 patents)

12. Hideo Nakanishi (3 out of 13 patents)

13. Hiroyuki Oi (3 out of 4 patents)

14. Hiroshi Koya (3 out of 4 patents)

15. Yoshiaki Arai (3 out of 11 patents)

Core Competencies:

Polysilicon Cleaning

Silicon Substrate Analysis

Polycrystalline Silicon Evaluation

CVD Apparatus Maintenance

Epitaxial Wafer Manufacturing

Dielectrically Separated Wafer

Silicon Wafer Heat Treatment

Single Crystal Growth

Semiconductor Substrate Treatment

Impurity Concentration Detection

SOI Structure Fabrication

Wafer Binding Techniques

51 patents: Sort by Forward Citations

1. 7067428 - Method for cleaning polysilicon (2006-06-27),

2. 6995834 - Method for analyzing impurities in a silicon substrate and apparatus for decomposing a silicon substrate through vapor-phase reaction (2006-02-07),

3. 6916657 - Evaluation method for polycrystalline silicon (2005-07-12),

4. 6887721 - Method of purging CVD apparatus and method for judging maintenance of times of semiconductor production apparatuses (2005-05-03),

5. 6818197 - Epitaxial wafer (2004-11-16),

6. 6815774 - Dielectrically separated wafer and method of the same (2004-11-09),

7. 6693286 - Method for evaluating the quality of a semiconductor substrate (2004-02-17),

8. 6682597 - Silicon wafer, and heat treatment method of the same and the heat-treated silicon wafer (2004-01-27),

9. 6663708 - Silicon wafer, and manufacturing method and heat treatment method of the same (2003-12-16),

10. 6562692 - Dielectric isolated wafer and its production method (2003-05-13),

11. 6547875 - Epitaxial wafer and a method for manufacturing the same (2003-04-15),

12. 6534774 - Method and apparatus for evaluating the quality of a semiconductor substrate (2003-03-18),

13. 6472289 - Dielectrically separated wafer and method of manufacturing the same (2002-10-29),

14. 6451107 - Method for simulating the shape of the solid-liquid interface between a single crystal and a molten liquid, and the distribution of point defects of the single crystal (2002-09-17),

15. 6447600 - Method of removing defects of single crystal material and single crystal material from which defects are removed by the method (2002-09-10),

Mitsubishi Materials Silicon Corporation is a leading global supplier of high-quality silicon wafers for the semiconductor and solar industries. With advanced manufacturing facilities and a commitment to innovation, we deliver state-of-the-art silicon solutions to support the development of cutting-edge technologies. Our extensive product portfolio includes a wide range of silicon wafer sizes and specifications, meeting the diverse needs of our customers worldwide. Visit our website to learn more about our products, services, and expertise.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 30 2025

51 Patents

#690 in Tokyo

#1,649 in Japan

#13,381 in the World

Mitsubishi Materials Silicon Corporation

Forward Citations = 815

96 inventors:

Hisashi Furuya (15 out of 21 patents)

Takashi Atami (8 out of 12 patents)

Keisei Abe (6 out of 8 patents)

4. Hiroaki Taguchi (5 out of 14 patents)

5. Michio Kida (5 out of 18 patents)

Please report any incorrect information to support@idiyas.com

Loading…