The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2005

Filed:

May. 31, 2001
Applicants:

Kenji Hori, Tokyo, JP;

Go Sasaki, Yokkaichi, JP;

Inventors:

Kenji Hori, Tokyo, JP;

Go Sasaki, Yokkaichi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N023/083 ; G01T001/00 ;
U.S. Cl.
CPC ...
Abstract

An evaluation method for polycrystalline silicon including the steps of immersing the polycrystalline silicon in an agent which is capable of dissolving the polycrystalline silicon, and counting the number of foreign particles in the agent. The polycrystalline silicon thus evaluated may be used as a material for pulling single crystal silicon. The evaluation method may further include a step of analyzing the composition of the foreign particles. In yet another aspect, the evaluation method may further include a step of subjecting the agent to a circulation filtering process prior to the immersion of the polycrystalline silicon in the agent.


Find Patent Forward Citations

Hori, Kenji. (2005). Evaluation method for polycrystalline silicon (U.S. Patent No. 6916657). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6916657

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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