The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2002
Filed:
Mar. 30, 2001
Jun Furukawa, Saitama, JP;
Mitsuru Sudou, Saitama, JP;
Tetsuya Nakai, Saitama, JP;
Takao Fujikawa, Hyogo, JP;
Takuya Masui, Hyogo, JP;
Mitsubishi Materials Silicon Corporation, Tokyo, JP;
Abstract
A hot isostatic pressing treatment is conducted for a single crystal body ( ) in an atmosphere where the single crystal body ( ) is stable, under a pressure of 0.2 to 304 MPa at a temperature which is 0.85 or more times the melting point in an absolute temperature unit of the single crystal body ( ), for 5 minutes to 20 hours; and the single crystal body ( ) is annealed. It is preferable that the atmosphere where the single crystal body ( ) is stable is an inert gas atmosphere or an atmosphere containing vapor of a high vapor pressure element, and it is more preferable that the HIP treatment is conducted under a pressure of 10 to 200 MPa. Further, the single crystal body ( ) may be an ingot of a silicon single crystal, a GaAs single crystal, an InP single crystal, a ZnS single crystal or a ZnSe single crystal, or a block or wafer obtained by slicing the ingot. In this way, there are expelled or dispersed those lattice defects such as vacancy type grown-in defects existing not only at the surface but also at the interior of the single crystal body ( ), irrespectively of the size of the single crystal body ( ).