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Takasago, Japan

Takao Fujikawa

USPTO Granted Patents = 43 (Patent Applications = 3)

EPO Patents = 2 (Patent Applications = 1)

Average Co-Inventor Count = 3.8

ph-index = 12

Forward Citations = 529(Granted Patents)

Location History:

Kobe, JP (1983 - 1997)
Hyogo, JP (2002 - 2004)
Takasago, JP (1997 - 2014)

Company Filing History:

34 out of 1,100

Kabushiki Kaisha Kobe Seiko Sho

Kobe Steel, Ltd.

Nihon Shinku Gijutsu Kabushiki Kaisha

4. 1 out of 122

Kabushiki Kaisha Kobe Seiko Sho (kobe Steel, Ltd.)

5. 1 out of 441

Kabushiki Kaisha Kobe Sekio Sho

Mitsubishi Materials Silicon Corporation

Marine Bio Co., Ltd.

where one patent can have more than one assignee

Years Active: 1983-2014

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Areas of Expertise:

Hot Isostatic Pressing

Temperature Measuring Apparatus

Semiconductor Substrate

High-Pressure Treatment

Single Crystal Growth

Sintered Silicon Nitride

Carbonizing Process

Wiring Film Formation

High Density Sintering

Superconducting Wires

Pressure Processing Apparatus

Thermocouple Technology

43 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8652370 - Hot isostatic pressing method and apparatus (2014-02-18),

2. 7011510 - Hot isostatic pressing apparatus and hot isostatic pressing method (2006-03-14),

3. 7008210 - Hot isostatic pressing apparatus (2006-03-07),

4. 6991370 - Temperature measuring apparatus of high melting point metal carbide-carbon system material thermocouple type, and method for producing the apparatus (2006-01-31),

5. 6916735 - Method for forming aerial metallic wiring on semiconductor substrate (2005-07-12),

6. 6837086 - Hot isostatic pressing method and apparatus (2005-01-04),

7. 6790774 - Method of forming a wiring film by applying high temperature/high pressure (2004-09-14),

8. 6733592 - High-temperature and high-pressure treatment device (2004-05-11),

9. 6491518 - Apparatus for high-temperature and high-pressure treatment (2002-12-10),

10. 6451682 - Method of forming interconnect film (2002-09-17),

11. 6447600 - Method of removing defects of single crystal material and single crystal material from which defects are removed by the method (2002-09-10),

12. 6328560 - Pressure processing apparatus for semiconductors (2001-12-11),

13. 6323120 - Method of forming a wiring film (2001-11-27),

14. 6299739 - Method of forming metal wiring film (2001-10-09),

15. 6285010 - Method and device for high-temperature, high-pressure treatment of semiconductor wafer (2001-09-04),

Title: The Innovative Journey of Takao Fujikawa

Introduction:

Takao Fujikawa is a renowned inventor hailing from Takasago, Japan. His groundbreaking work in the field of technology has earned him a well-deserved reputation as a pioneer in innovation.

Latest Patents:

Takao Fujikawa holds several patents in various technological advancements, showcasing his continuous dedication to pushing the boundaries of innovation.

Career Highlights:

Throughout his illustrious career, Takao Fujikawa has consistently demonstrated a keen eye for identifying gaps in the market and developing inventive solutions to address them. His innovative spirit has led to the creation of products that have revolutionized industries.

Collaborations:

Takao Fujikawa has collaborated with leading tech companies and research institutions, pooling his expertise with other visionaries to bring cutting-edge ideas to life. These collaborations have resulted in the development of groundbreaking technologies that have had a lasting impact on society.

Conclusion:

In conclusion, Takao Fujikawa's contributions to the world of innovation are immeasurable. His relentless pursuit of excellence and passion for creating solutions to complex problems have solidified his position as a trailblazer in the field of technology.

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