The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2001
Filed:
Mar. 07, 2000
Applicant:
Inventors:
Takao Fujikawa, Takasago, JP;
Yutaka Narukawa, Takasago, JP;
Tsuneharu Masuda, Takasago, JP;
Makoto Kadoguchi, Takasago, JP;
Assignee:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
A21B 1/00 ;
U.S. Cl.
CPC ...
A21B 1/00 ;
Abstract
In a high-temperature, high-pressure treatment method for semiconductor wafer for charging a wafer-like semiconductor material in a pressure vessel, forcing and pressurizing an inert gas such as argon thereto, and raising the temperature by heating by use of an electric resistance type heater, wafers are vertically stacked in the treatment chamber, and the heater is arranged within the treatment chamber to perform the treatment while supplying a heating power by DC to the heater, whereby generation of particles from the heater is suppressed.