Takaaki Shiota

Title: The Innovative Ventures of Takaaki Shiota

Introduction

Takaaki Shiota is a prominent inventor based in Tokyo, Japan, known for his significant contributions to the field of silicon wafer technology. With a total of 8 patents to his name, Shiota has demonstrated a consistent commitment to innovation and advancement in semiconductor materials.

Latest Patents

Among his latest inventions is a patent for a thin silicon wafer with high gettering ability. This invention focuses on a silicon wafer containing an oxygen precipitate layer, where the depth of the DZ layer ranges from the wafer surface to the oxygen precipitate layer—specifically between 2 to 10 micrometers. Additionally, the concentration of the oxygen precipitate layer is set at not less than 5×10 precipitates/cm, providing enhanced performance and quality in silicon wafers.

Another notable patent is the silicon wafer surface defect evaluation method. This method allows for the easy detection of regions within the wafer where small crystal defects may exist. It involves a rapid heat treatment step of the silicon wafer—from a silicon single-crystal ingot—in an atmosphere suitable for nitriding silicon. This process accelerates the temperature increase from room temperature to between 1170°C and just below the melting point of silicon. It also includes cooling the wafer back to room temperature at a controlled rate. A surface photo voltage method is subsequently utilized to assess the minority carrier diffusion length, effectively identifying small crystal defects that may be undetectable by conventional particle counters.

Career Highlights

Takaaki Shiota has made significant strides in his career, contributing to the semiconductor industry through key roles in various companies. Notably, he has worked with Sumco Corporation and Mitsubishi Materials Silicon Corporation, where he honed his expertise in silicon wafer technology and innovation.

Collaborations

Throughout his career, Shiota has collaborated with talented individuals in the industry, including Hisashi Furuya and Hiroshi Koya. Their collective efforts have helped push the boundaries of research and yielded influential advancements in semiconductor materials.

Conclusion

Takaaki Shiota's inventions reflect his dedication to enhancing silicon wafer technology. With his patents showcasing innovative approaches to conflict resolution in wafer defects and improved performance, Shiota continues to play a crucial role in the evolution of the semiconductor industry. As he advances in his career, the impact of his work will likely resonate across various technological applications.