Location History:
- Saitama, JP (1995)
- Chiyoda-ku, JP (1999 - 2000)
- Omiya, JP (1998 - 2001)
- Tokyo, JP (2000 - 2008)
Company Filing History:
Years Active: 1995-2008
Title: Keisei Abe: Innovator in Silicon Crystal Production
Introduction
Keisei Abe is a prominent inventor based in Tokyo, Japan, known for his significant contributions to the field of semiconductor technology. With a total of eight patents to his name, Abe has made remarkable advancements in the production of silicon single crystals, which are essential for various electronic applications.
Latest Patents
Abe's latest patents include a method for producing silicon single crystals and a semiconductor single-crystal growth system. The method involves pulling the silicon single crystal from a silicon melt contained in a crucible while applying a magnetic field in a radial direction. This innovative approach allows for the control of the thermal gradient in the axial direction of the crystal, ensuring consistent quality across different portions of the silicon single crystal. The semiconductor single-crystal growth system is designed to grow high-quality, low-carbon-concentration single crystals. It features an inverted conical flow-guide cover and a flow guide cylinder, both strategically placed to enhance the gas-flow guiding function near the melt.
Career Highlights
Throughout his career, Keisei Abe has worked with notable companies such as Mitsubishi Materials Silicon Corporation and Mitsubishi Materials Corporation. His experience in these organizations has contributed to his expertise in semiconductor manufacturing and crystal growth technologies.
Collaborations
Abe has collaborated with esteemed colleagues, including Yoshiaki Arai and Norihisa Machida, who have played a role in his research and development efforts.
Conclusion
Keisei Abe's innovative work in silicon crystal production has positioned him as a key figure in the semiconductor industry. His patents reflect a commitment to advancing technology and improving manufacturing processes.