The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2000
Filed:
Jun. 05, 1998
Applicant:
Inventors:
Hideo Nakanishi, Tokyo, JP;
Susumu Maeda, Hiratsuka, JP;
Keisei Abe, Tokyo, JP;
Kazutaka Terashima, Ebina, JP;
Assignees:
Toshiba Ceramics Co., Ltd., Tokyo, JP;
Komatsu Electronic Metals Co., Ltd., Hiratsuka, JP;
Japan Science and Technology Corporation, Kawaguchi, JP;
Mitsubishi Materials Silicon corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ; C30B / ;
U.S. Cl.
CPC ...
117 73 ; 117 78 ; 117 79 ; 117931 ;
Abstract
A germanium layer 19 is melted on top of a starting polycrystalline silicon ingot 18, at a temperature below the melting point of pure silicon. Silicon is dissolved at the interface and floats to the top of the germanium melt to form a silicon melt layer 11, from which a crystal 20 can be drawn. The process permits the production of large diameter crystal with low oxygen content and no more than one percent germanium.