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Pine Brook, NJ, United States of America

Ii-Vi Advanced Materials, LLC

USPTO Granted Patents = 13

Forward Citations = 2

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16 inventors (with patents filed for the assignee):

Adolf Schöner (5 out of 17 patents)

Hossein Elahipanah (5 out of 17 patents)

Sergey Reshanov (5 out of 17 patents)

4. Varatharajan Rengarajan (5 out of 13 patents)

5. Ilya Zwieback (4 out of 27 patents)

6. Nicolas Thierry-Jebali (3 out of 14 patents)

7. Gary E Ruland (3 out of 10 patents)

8. Andrew E Souzis (3 out of 3 patents)

9. Avinash Gupta (2 out of 2 patents)

10. Xueping Xu (2 out of 2 patents)

11. Christian Vieider (1 out of 5 patents)

12. Wlodzimierz Kaplan (1 out of 3 patents)

13. Jeremy Turcaud (1 out of 2 patents)

14. Yk Chen (1 out of 1 patent)

15. Iiya Zwieback (1 out of 1 patent)

13 patents: Sort by Forward Citations

1. 12696692 - Crystalline wafers and process for forming crystalline wafers (2026-07-28),

2. 12618171 - Large diameter silicon carbide single crystals and apparatus and method of manufacture thereof (2026-05-05),

3. 12584239 - Physical vapor transport system comprising a doping capsule with inner and outer crucibles with a capillary channel formed in an inner and outer crucible lid (2026-03-24),

4. 12476149 - Crystal efficient SiC device wafer production (2025-11-18),

5. 12328914 - Buried grid with shield in wide band gap material (2025-06-10),

6. 12060650 - Vanadium-compensated 4H and 6H single crystals of optical grade, and silicon carbide crystals and methods for producing same (2024-08-13),

7. 12034001 - Concept for silicon carbide power devices (2024-07-09),

8. 12006591 - Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second material (2024-06-11),

9. 11996330 - Crystal efficient SiC device wafer production (2024-05-28),

10. 11984497 - Integration of a Schottky diode with a MOSFET (2024-05-14),

11. 11984474 - Buried grid with shield in wide band gap material (2024-05-14),

12. 11923450 - MOSFET in SiC with self-aligned lateral MOS channel (2024-03-05),

13. 11905618 - Large diameter silicon carbide single crystals and apparatus and method of manufacture thereof (2024-02-20),

Company Overview

Ii-Vi Advanced Materials, LLC, based in Pine Brook, NJ, specializes in the development and manufacturing of advanced materials for various high-tech applications. The company focuses on innovative solutions in the fields of optics, photonics, and semiconductor technologies, catering to industries such as telecommunications, aerospace, and defense. With a commitment to research and development, Ii-Vi Advanced Materials aims to enhance performance and efficiency in its product offerings, contributing to advancements in technology and materials science.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 6 2026

13 Patents

#3 in Pine Brook, NJ

#896 in New Jersey

#23,815 in US

#44,988 in the World

Pine Brook, NJ, United States of America

Ii-Vi Advanced Materials, LLC

Forward Citations = 2

16 inventors:

Adolf Schöner (5 out of 17 patents)

Hossein Elahipanah (5 out of 17 patents)

Sergey Reshanov (5 out of 17 patents)

4. Varatharajan Rengarajan (5 out of 13 patents)

5. Ilya Zwieback (4 out of 27 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Ii-Vi Advanced Materials, LLC. Retrieved from https://idiyas.com/company/ii-vi-advanced-materials

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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