The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2025
Filed:
Apr. 10, 2024
Applicant:
Ii-vi Advanced Materials, Llc, Pine Brook, NJ (US);
Inventor:
Hossein Elahipanah, Sollentuna, SE;
Assignee:
II-VI ADVANCED MATERIALS, LLC, Pine Brook, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 8/60 (2025.01); H10D 62/80 (2025.01); H10D 62/83 (2025.01); H10D 62/832 (2025.01); H10D 62/85 (2025.01); H10D 64/00 (2025.01);
U.S. Cl.
CPC ...
H10D 62/106 (2025.01); H10D 8/60 (2025.01); H10D 62/80 (2025.01); H10D 62/8303 (2025.01); H10D 62/8325 (2025.01); H10D 62/8503 (2025.01); H10D 64/112 (2025.01);
Abstract
There is disclosed a structure in a wide band gap material such as silicon carbide wherein there is a buried grid and shields covering at least one middle point between two adjacent parts of the buried grid, when viewed from above. Advantages of the invention include easy manufacture without extra lithographic steps compared with standard manufacturing process, an improved trade-off between the current conduction and voltage blocking characteristics of a JBSD comprising the structure.