The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2024

Filed:

Sep. 23, 2020
Applicant:

Ii-vi Delaware, Inc., Wilmington, DE (US);

Inventors:

Ilya Zwieback, Township Of Washington, NJ (US);

Varatharajan Rengarajan, Flanders, NJ (US);

Andrew E. Souzis, Ramsey, NJ (US);

Gary E. Ruland, Morris Plains, NJ (US);

Assignee:

II-VI ADVANCED MATERIALS, LLC, Pine Brook, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 23/02 (2006.01); C01B 32/956 (2017.01); C04B 35/573 (2006.01); C04B 35/65 (2006.01); C30B 29/36 (2006.01); G02F 1/00 (2006.01); H01L 29/36 (2006.01);
U.S. Cl.
CPC ...
C30B 23/02 (2013.01); C01B 32/956 (2017.08); C04B 35/573 (2013.01); C04B 35/65 (2013.01); C30B 29/36 (2013.01); C04B 2235/3205 (2013.01); C04B 2235/3826 (2013.01); C04B 2235/3839 (2013.01); C04B 2235/425 (2013.01); C04B 2235/722 (2013.01); C04B 2235/76 (2013.01); C04B 2235/9661 (2013.01); G02F 1/0063 (2013.01); H01L 29/36 (2013.01);
Abstract

The present disclosure generally relates to silicon carbide crystals which may be used in optical applications, and to methods for producing the same. In one form, a composition includes an aluminum doped silicon carbide crystal having residual nitrogen and boron impurities. The concentration of aluminum in the silicon carbide crystal is greater than the combined concentrations of nitrogen and boron in the silicon carbide crystal, and the silicon carbide crystal includes an optical absorption coefficient of less than about 0.4 cmat a wavelength in a range between about 400 nm to about 800 nm.


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