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For the Inventor, By the Inventor

Upplands-Väsby, Sweden

Sergey Reshanov

This inventor holds 17 USPTO granted patents and 3 published patent applications and 1 EPO patent, primarily in Silicon Carbide Devices. Top assignees: Ii-Vi Delaware, Inc., Ii-Vi Advanced Materials, LLC. Active years: 2021-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sergey Reshanov. Retrieved from https://idiyas.com/inventor/sergey-reshanov

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 17 

% Patents Active = 100.0

 

Average Co-Inventor Count = 3.7

ph-index = 2

Forward Citations = 13(Granted Patents)


Location History:

  • Upplands-Vasby, SE (2021 - 2024)
  • Upplands-Väsby, SE (2022 - 2024)
  • Upplands Vasby, SE (2024)
  • Upplands Väsby, SE (2024)

Company Filing History:

goldMedal12 out of 412 
 
Ii-Vi Delaware, Inc.
 patents
silverMedal5 out of 13 
 
Ii-Vi Advanced Materials, LLC
 patents

Years Active: 2021-2026

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Areas of Expertise:
Schottky Diode
MOSFET
Silicon Carbide
Power Devices
High Current Feeder
Grid Manufacturing
Device Wafer Production
Self-Aligned Channel
17 patents (USPTO):Explore Patents
1. 12660217 - Buried grid double junction barrier Schottky diode and method of making (2026-06-16),
2. 12476149 - Crystal efficient SiC device wafer production (2025-11-18),
3. 12249630 - Method for manufacturing a grid (2025-03-11),
4. 12034001 - Concept for silicon carbide power devices (2024-07-09),
5. 11996330 - Crystal efficient SiC device wafer production (2024-05-28),
6. 11984497 - Integration of a Schottky diode with a MOSFET (2024-05-14),
7. 11923450 - MOSFET in SiC with self-aligned lateral MOS channel (2024-03-05),
8. 11876116 - Method for manufacturing a grid (2024-01-16),
9. 11869940 - Feeder design with high current capability (2024-01-09),
10. 11652099 - Concept for silicon for carbide power devices (2023-05-16),
11. 11581431 - Integration of a Schottky diode with a MOSFET (2023-02-14),
12. 11575007 - Feeder design with high current capability (2023-02-07),
13. 11444192 - MOSFET in sic with self-aligned lateral MOS channel (2022-09-13),
14. 11342423 - Method for manufacturing a grid (2022-05-24),
15. 11276681 - Concept for silicon carbide power devices (2022-03-15),

Title: Sergey Reshanov - Innovative Inventor from Upplands-Vasby

Introduction: Sergey Reshanov is a talented inventor hailing from Upplands-Vasby, Sweden, known for his groundbreaking contributions to various technological fields.

Latest Patents: Sergey Reshanov holds several patents in the areas of renewable energy, sustainable materials, and advanced robotics, showcasing his commitment to creating a more efficient and eco-friendly future.

Career Highlights: With a background in engineering and a passion for innovation, Sergey Reshanov has led numerous successful projects that have revolutionized industries and improved the quality of life for many.

Collaborations: Throughout his career, Sergey Reshanov has collaborated with leading research institutions, universities, and tech companies to bring his ideas to life and turn them into tangible products that benefit society.

Conclusion: Sergey Reshanov's dedication to pushing the boundaries of technology and his relentless pursuit of excellence make him a true pioneer in the world of innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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