The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Apr. 20, 2023
Ii-vi Delaware, Inc., Wilmington, DE (US);
II-VI Delaware, Inc., Wilmington, DE (US);
Abstract
A buried grid double junction barrier Schottky diode may include a drift layer, a grid layer comprising a plurality of grid segments at least partially in the drift layer, a regrown layer on the grid layer and the drift layer, and first and second Schottky material layers. The grid segments may define at least one grid spacing area between adjacent grid segments. The first Schottky material layer may be at least partially on the regrown layer and may at least partially overlap the grid segments of the grid layer. The second Schottky material layer may be at least partially on the regrown layer and may at least partially overlap the grid spacing area(s). The second Schottky material layer may have a different Schottky barrier height than the first Schottky material layer. A method of making a buried grid double junction barrier Schottky diode is also disclosed.