The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2024
Filed:
Jan. 05, 2023
Ii-vi Delaware, Inc., Wilmington, DE (US);
Hossein Elahipanah, Sollentuna, SE;
Nicolas Thierry-Jebali, Stockholm, SE;
Adolf Schoner, Hasselby, SE;
Sergey Reshanov, Upplands-Vasby, SE;
II-VI DELAWARE, INC., Wilmington, DE (US);
Abstract
A feeder design is manufactured as a structure in a SiC semiconductor material comprising at least two p-type grids in an n-type SiC material (), comprising at least one epitaxially grown p-type region, wherein an Ohmic contact is applied on the at least one epitaxially grown p-type region, wherein an epitaxially grown n-type layer is applied on at least a part of the at least two p-type grids and the n-type SiC material () wherein the at least two p-type grids () are applied in at least a first and a second regions at least close to the at least first and second corners respectively and that there is a region in the n-type SiC material () between the first and a second regions without any grids.