The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2024
Filed:
Apr. 27, 2022
Ii-vi Delaware, Inc., Wilmington, DE (US);
Adolf Schoner, Hässelby, SE;
Sergey Reshanov, Upplands-Väsby, SE;
Nicolas Thierry-Jebali, Stockholm, SE;
Hossein Elahipanah, Sollentuna, SE;
II-VI DELAWARE, INC., Wilmington, DE (US);
Abstract
A grid is manufactured with a combination of ion implant and epitaxy growth. The grid structure is made in a SiC semiconductor material with the steps of a) providing a substrate comprising a doped semiconductor SiC material, said substrate comprising a first layer (n), b) by epitaxial growth adding at least one doped semiconductor SiC material to form separated second regions (p) on the first layer (n), if necessary with aid of removing parts of the added semiconductor material to form separated second regions (p) on the first layer (n), and c) by ion implantation at least once at a stage selected from the group consisting of directly after step a), and directly after step b); implanting ions in the first layer (n) to form first regions (p). It is possible to manufacture a grid with rounded corners as well as an upper part with a high doping level. It is possible to manufacture a component with efficient voltage blocking, high current conduction, low total resistance, high surge current capability, and fast switching.