Washington Township, NJ, United States of America

Ilya Zwieback

USPTO Granted Patents = 23 

 

Average Co-Inventor Count = 4.4

ph-index = 6

Forward Citations = 79(Granted Patents)


Location History:

  • Washington Township, NJ (US) (2009 - 2021)
  • Township of Washington, NJ (US) (2013 - 2023)

Company Filing History:


Years Active: 2009-2023

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23 patents (USPTO):Explore Patents

Title: Profile of Inventor Ilya Zwieback: Innovations in SiC Growth Technology

Introduction: Ilya Zwieback is an accomplished inventor based in Washington Township, NJ, known for his significant contributions to the field of materials science and engineering. With an impressive portfolio of 23 patents, Zwieback's work focuses primarily on advancements in the growth of silicon carbide (SiC) crystals.

Latest Patents: Zwieback's most recent invention is a SiC single crystal sublimation growth apparatus. This innovative physical vapor transport growth system includes a growth chamber that is charged with SiC source material and a SiC seed crystal positioned in a spaced relation. The system features a gas-permeable envelope, which divides the growth chamber into two compartments: a source compartment with the SiC source material and a crystallization compartment containing the SiC seed crystal. The unique aspect of the envelope is its reactivity to vapor generated during the sublimation growth process. This reaction produces C-bearing vapor, which serves as an additional carbon source during the growth of SiC single crystals on the seed crystal.

Career Highlights: Throughout his career, Ilya Zwieback has worked with esteemed organizations, including II-VI Incorporated and II-VI Delaware, Inc. His experience in these companies has allowed him to contribute to significant innovations in crystal growth technology.

Collaborations: Zwieback has collaborated with prominent professionals in his field, including Avinash K. Gupta and Thomas E. Anderson. These partnerships have furthered his research and development efforts, culminating in groundbreaking technologies that optimize SiC crystal growth.

Conclusion: Ilya Zwieback's dedication to advancing silicon carbide growth technologies has resulted in numerous patents that pave the way for future innovations in the field. His work reflects the essence of modern invention, showcasing the potential of materials science to revolutionize various applications. As a prominent figure in the industry, Zwieback continues to inspire future inventors with his contributions.

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