The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2017
Filed:
Oct. 05, 2014
Ii-vi Incorporated, Saxonburg, PA (US);
Ilya Zwieback, Township of Washington, NJ (US);
Thomas E. Anderson, Morristown, NJ (US);
Andrew E. Souzis, Hawthorne, NJ (US);
Gary E. Ruland, Morris Plains, NJ (US);
Avinash K. Gupta, Basking Ridge, NJ (US);
Varatharajan Rengarajan, Flanders, NJ (US);
Ping Wu, Warren, NJ (US);
Xueping Xu, Westport, CT (US);
II-VI Incorporated, Saxonburg, PA (US);
Abstract
A method and system of forming large-diameter SiC single crystals suitable for fabricating high crystal quality SiC substrates of 100, 125, 150 and 200 mm in diameter are described. The SiC single crystals are grown by a seeded sublimation technique in the presence of a shallow radial temperature gradient. During SiC sublimation growth, a flux of SiC bearing vapors filtered from carbon particulates is substantially restricted to a central area of the surface of the seed crystal by a separation plate disposed between the seed crystal and a source of the SiC bearing vapors. The separation plate includes a first, substantially vapor-permeable part surrounded by a second, substantially non vapor-permeable part. The grown crystals have a flat or slightly convex growth interface. Large-diameter SiC wafers fabricated from the grown crystals exhibit low lattice curvature and low densities of crystal defects, such as stacking faults, inclusions, micropipes and dislocations.