Avinash K Gupta

Title: Avinash K Gupta: Innovator in SiC Single Crystal Sublimation Growth

Introduction: Avinash K Gupta, based in Basking Ridge, NJ, is a distinguished inventor with a remarkable portfolio of 21 patents. His contributions to the field of materials science and crystal growth technology have established him as a key figure in innovation.

Latest Patents: One of Avinash K Gupta's latest patents revolves around a SiC single crystal sublimation growth apparatus. This innovative physical vapor transport growth system includes a growth chamber filled with SiC source material and a SiC seed crystal positioned in spaced relation. A gas-permeable envelope is strategically placed within the growth chamber, separating it into a source compartment containing the SiC source material and a crystallization compartment housing the SiC seed crystal. Notably, the envelope is composed of a material that reacts with vapor generated during sublimation growth, producing C-bearing vapor. This vapor serves as an additional source of carbon, enhancing the growth of the SiC single crystal on the seed crystal.

Career Highlights: Throughout his career, Avinash has made significant strides in his field while working for notable companies such as II-VI Incorporated and II-VI Delaware, Inc. His innovative mindset and technical expertise have greatly contributed to advancements in the industry.

Collaborations: Avinash has collaborated with esteemed colleagues such as Ilya Zwieback and Edward Semenas, further enhancing his work through teamwork and shared knowledge. These collaborations reflect his ability to engage with other professionals in the field, promoting innovation and excellence.

Conclusion: Avinash K Gupta's impressive oeuvre of patents and his commitment to advancing technologies, particularly in SiC single crystal growth, solidify his role as a leading inventor. His work not only showcases his innovative capabilities but also paves the way for future advancements in materials science.