The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Sep. 27, 2006
Ilya Zwieback, Washington Township, NJ (US);
Donovan L. Barrett, Port Orange, FL (US);
Avinash K. Gupta, Basking Ridge, NJ (US);
Ilya Zwieback, Washington Township, NJ (US);
Donovan L. Barrett, Port Orange, FL (US);
Avinash K. Gupta, Basking Ridge, NJ (US);
II-VI Incorporated, Saxonburg, PA (US);
Abstract
In method of crystal growth, an interior of a crystal growth chamber () is heated to a first temperature in the presence of a first vacuum pressure whereupon at least one gas absorbed in a material () disposed inside the chamber is degassed therefrom. The interior of the chamber is then exposed to an inert gas at a second, higher temperature in the presence of a second vacuum pressure that is at a higher pressure than the first vacuum pressure. The inert gas pressure in the chamber is then reduced to a third vacuum pressure that is between the first and second vacuum pressures and the temperature inside the chamber is lowered to a third temperature that is between the first and second temperatures, whereupon source material () inside the chamber vaporizes and deposits on a seed crystal () inside the chamber.