The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
May. 24, 2013
Ii-vi Incorporated, Saxonburg, PA (US);
Ilya Zwieback, Township of Washington, NJ (US);
Ping Wu, Warren, NJ (US);
Varatharajan Rengarajan, Flanders, NJ (US);
Avinash K. Gupta, Basking Ridge, NJ (US);
Thomas E. Anderson, Morristown, NJ (US);
Gary E. Ruland, Morris Plains, NJ (US);
Andrew E. Souzis, Hawthorne, NJ (US);
Xueping Xu, Westport, CT (US);
II-VI Incorporated, Saxonburg, PA (US);
Abstract
In a crystal growth apparatus and method, polycrystalline source material and a seed crystal are introduced into a growth ambient comprised of a growth crucible disposed inside of a furnace chamber. In the presence of a first sublimation growth pressure, a single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a first gas that includes a reactive component that reacts with and removes donor and/or acceptor background impurities from the growth ambient during said sublimation growth. Then, in the presence of a second sublimation growth pressure, the single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a second gas that includes dopant vapors, but which does not include the reactive component.