The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Oct. 28, 2013
Applicant:
Ii-vi Incorporated, Saxonburg, PA (US);
Inventors:
Ilya Zwieback, Township of Washington, NJ (US);
Thomas E. Anderson, Morristown, NJ (US);
Avinash K. Gupta, Basking Ridge, NJ (US);
Michael C. Nolan, Andover, NJ (US);
Bryan K. Brouhard, Budd Lake, NJ (US);
Gary E. Ruland, Morris Plains, NJ (US);
Assignee:
II-VI Incorporated, Saxonburg, PA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 23/02 (2006.01); C30B 29/36 (2006.01); C30B 23/00 (2006.01);
U.S. Cl.
CPC ...
C30B 23/02 (2013.01); C30B 23/00 (2013.01); C30B 29/36 (2013.01);
Abstract
A sublimation grown SiC single crystal includes vanadium dopant incorporated into the SiC single crystal structure via introduction of a gaseous vanadium compound into a growth environment of the SiC single crystal during growth of the SiC single crystal.