Budd Lake, NJ, United States of America

Bryan K Brouhard

USPTO Granted Patents = 3 

Average Co-Inventor Count = 4.9

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2016-2017

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3 patents (USPTO):Explore Patents

Title: Innovations by Bryan K Brouhard

Introduction

Bryan K Brouhard is a notable inventor based in Budd Lake, NJ (US). He has made significant contributions to the field of silicon carbide (SiC) crystal growth, holding a total of 3 patents. His work focuses on advanced methods for producing high-quality SiC single crystals, which are essential for various applications in electronics and materials science.

Latest Patents

One of his latest patents is titled "Method for silicon carbide crystal growth by reacting elemental silicon vapor with a porous carbon solid source material." This innovative method involves using chemical vapor transport to grow bulk SiC single crystals. In this process, a growth crucible is charged with a solid carbon source material and a SiC single crystal seed. Halosilane gas and a reducing gas are introduced into the crucible, where they react to produce elemental silicon vapor. This vapor then interacts with the solid carbon source, leading to the growth of SiC single crystals on the seed.

Another significant patent by Brouhard is "Vanadium doped SiC single crystals and method thereof." This patent describes a sublimation-grown SiC single crystal that incorporates vanadium dopant into its structure. The gaseous vanadium compound is introduced into the growth environment during the crystal growth process, enhancing the properties of the SiC single crystal.

Career Highlights

Bryan K Brouhard is currently employed at II-VI Incorporated, a company known for its advancements in materials and optoelectronic components. His work at II-VI has allowed him to further develop his expertise in crystal growth and semiconductor technologies.

Collaborations

Throughout his career, Brouhard has collaborated with notable colleagues, including Michael C Nolan and Ilya Zwieback. These collaborations have contributed to the advancement of research in the field of silicon carbide and its applications.

Conclusion

Bryan K Brouhard's innovative work in silicon carbide crystal growth has led to significant advancements in the field. His patents reflect a deep understanding of materials science and a commitment to developing new technologies. His contributions continue to impact the industry positively.

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