Michael C Nolan

Title: Michael C Nolan: Innovator in Silicon Carbide Crystal Growth

Introduction

Michael C Nolan is a notable inventor based in Andover, NJ (US). He has made significant contributions to the field of materials science, particularly in the growth of silicon carbide (SiC) crystals. With a total of 3 patents to his name, Nolan's work has advanced the understanding and application of SiC in various industries.

Latest Patents

One of Nolan's latest patents is titled "Method for silicon carbide crystal growth by reacting elemental silicon vapor with a porous carbon solid source material." This innovative method involves using chemical vapor transport to grow bulk SiC single crystals. In this process, silicon acts as a chemical transport agent for carbon, where a growth crucible is charged with a solid carbon source material and a SiC single crystal seed. The introduction of halosilane gas and a reducing gas into the crucible facilitates the chemical reaction necessary for the growth of SiC single crystals.

Another significant patent is "Vanadium doped SiC single crystals and method thereof." This patent describes a sublimation-grown SiC single crystal that incorporates vanadium dopant into its structure. The gaseous vanadium compound is introduced into the growth environment during the crystal's formation, enhancing its properties and potential applications.

Career Highlights

Michael C Nolan is currently employed at II-VI Incorporated, a company known for its advancements in engineered materials and optoelectronic components. His work at II-VI has allowed him to further explore and develop innovative methods for crystal growth, contributing to the company's reputation as a leader in the field.

Collaborations

Throughout his career, Nolan has collaborated with talented individuals such as Bryan K Brouhard and Ilya Zwieback. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Michael C Nolan's contributions to the field of silicon carbide crystal growth are noteworthy and impactful. His innovative patents and collaborations reflect his dedication to advancing materials science. Nolan's work continues to influence the industry and pave the way for future innovations.