Ii-vi Incorporated

Michael C Nolan

Ilya Zwieback

Bryan K Brouhard

Thomas E Anderson

Varatharajan Rengarajan

Avinash K Gupta

Gary E Ruland

In a method for growing bulk SiC single crystals using chemical vapor transport, wherein silicon acts as a chemical transport agent for carbon, a growth crucible is charged with a solid carbon source material and a SiC single crystal seed disposed therein in spaced relationship. A halosilane gas, such as SiCland a reducing gas, such as H, are introduced into the crucible via separate inlets and mix in the crucible interior. The crucible is heated in a manner that encourages chemical reaction between the halosilane gas and the reducing gas leading to the chemical reduction of the halosilane gas to elemental silicon (Si) vapor. The produced Si vapor is transported to the solid carbon source material where it reacts with the solid carbon source material yielding volatile Si-bearing and C-bearing molecules. The produced Si-bearing and C-bearing vapors are transported to the SiC single crystal seed and precipitate on the SiC single crystal seed causing growth of a SiC single crystal on the SiC single crystal seed.

Method for silicon carbide crystal growth by reacting elemental silicon vapor with a porous carbon solid source material

A sublimation grown SiC single crystal includes vanadium dopant incorporated into the SiC single crystal structure via introduction of a gaseous vanadium compound into a growth environment of the SiC single crystal during growth of the SiC single crystal.

Vanadium doped SiC single crystals and method thereof

A crucible has a first resistance heater is disposed in spaced relation above the top of the crucible and a second resistance heater with a first resistive section disposed in spaced relation beneath the bottom of the crucible and with a second resistive section disposed in spaced relation around the outside of the side of the crucible. The crucible is charged with a seed crystal at the top of an interior of the crucible and a source material in the interior of the crucible in spaced relation between the seed crystal and the bottom of the crucible. Electrical power of a sufficient extent is applied to the first and second resistance heaters to create in the interior of the crucible a temperature gradient of sufficient temperature to cause the source material to sublimate and condense on the seed crystal thereby forming a growing crystal.

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Andover, NJ, United States of America

Michael C Nolan