The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Sep. 27, 2007
Avinash Gupta, Basking Ridge, NJ (US);
Utpal K. Chakrabarti, Allentown, PA (US);
Jihong Chen, St. Charles, MO (US);
Edward Semenas, Allentown, PA (US);
Ping Wu, Warren, NJ (US);
Avinash Gupta, Basking Ridge, NJ (US);
Utpal K. Chakrabarti, Allentown, PA (US);
Jihong Chen, St. Charles, MO (US);
Edward Semenas, Allentown, PA (US);
Ping Wu, Warren, NJ (US);
II-VI Incorporated, Saxonburg, PA (US);
Abstract
In a crystal growth method, a seed crystaland a source materialare provided in spaced relation inside of a growth crucible. Starting conditions for the growth of a crystalin the growth crucibleare then established therein. The starting conditions include: a suitable gas inside the growth crucible, a suitable pressure of the gas inside the growth crucible, and a suitable temperature in the growth cruciblethat causes the source materialto sublimate and be transported via a temperature gradient in the growth crucibleto the seed crystalwhere the sublimated source material precipitates. During growth of the crystalinside the growth crucible, at least one of the following growth conditions are intermittently changed inside the growth cruciblea plurality of times: the gas in the growth crucible, the pressure of the gas in the growth crucible, and the temperature in the growth crucible