The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2020

Filed:

Jul. 10, 2018
Applicant:

Ii-vi Delaware, Inc., Wilmington, DE (US);

Inventors:

Xueping Xu, Westport, CT (US);

Avinash Gupta, Basking Ridge, NJ (US);

Mark Ramm, Richmond Hill, NY (US);

Ilya Zwieback, Washington Township, NJ (US);

Varatharajan Rengarajan, Flanders, NJ (US);

Gary E. Ruland, Oakland, NJ (US);

Assignee:

II-VI Delaware, Inc., Wilmington, DE (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 23/06 (2006.01); C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
C30B 29/36 (2013.01); C30B 23/06 (2013.01);
Abstract

A physical vapor transport (PVT) apparatus suitable for growing SiC boules comprises a crystal growth chamber (with a defined central vertical axis), a sealed crucible containing sublimation source material and including a seed fixture disposed in an offset position with respect to the central vertical axis of the apparatus, and a heat source disposed to surround the crystal growth chamber. The heat source is configured to raise the temperature within the sealed crucible such that the source material vaporizes and deposits on the seed wafer. The offset position of the seed fixture creates a radial temperature gradient across an exposed surface of the seed as the crystal boule is grown.


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