Mark Ramm

Title: Mark Ramm: Innovator in Silicon Carbide Crystal Technology

Introduction

Mark Ramm is a notable inventor based in Richmond Hill, NY (US). He has made significant contributions to the field of materials science, particularly in the development of high-quality silicon carbide crystals. His innovative work has led to advancements in various applications, including electronics and optoelectronics.

Latest Patents

Mark Ramm holds a patent for "High quality silicon carbide crystals and method of making the same." This patent describes a physical vapor transport (PVT) apparatus suitable for growing silicon carbide (SiC) boules. The apparatus features a crystal growth chamber with a defined central vertical axis, a sealed crucible containing sublimation source material, and a seed fixture positioned offset from the central axis. The heat source surrounding the crystal growth chamber raises the temperature within the crucible, allowing the source material to vaporize and deposit on the seed wafer. The unique offset position of the seed fixture creates a radial temperature gradient across the exposed surface of the seed as the crystal boule is grown.

Career Highlights

Mark Ramm is currently employed at II-VI Delaware, Inc., where he continues to push the boundaries of silicon carbide technology. His work has been instrumental in enhancing the quality and efficiency of crystal growth processes.

Collaborations

Throughout his career, Mark has collaborated with esteemed colleagues, including Xueping Xu and Avinash K Gupta. These partnerships have fostered innovation and contributed to the advancement of their shared field.

Conclusion

Mark Ramm's contributions to the field of silicon carbide crystal technology exemplify the impact of innovative thinking in materials science. His patent and ongoing work at II-VI Delaware, Inc. highlight his commitment to advancing this critical area of research.