The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2024

Filed:

Mar. 01, 2021
Applicant:

Ii-vi Delaware, Inc, Wilmington, DE (US);

Inventors:

Ilya Zwieback, Twp. of Washington, NJ (US);

Varatharajan Rengarajan, Flanders, NJ (US);

Andrew E. Souzis, Ramsey, NJ (US);

Gary Ruland, Morris Plains, NJ (US);

Assignee:

II-VI ADVANCED MATERIALS, LLC, Pine Brook, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 23/02 (2006.01); C01B 32/956 (2017.01); C04B 35/573 (2006.01); C04B 35/65 (2006.01); C30B 29/36 (2006.01); G02F 1/00 (2006.01); H01L 29/36 (2006.01);
U.S. Cl.
CPC ...
C30B 23/02 (2013.01); C01B 32/956 (2017.08); C04B 35/573 (2013.01); C04B 35/65 (2013.01); C30B 29/36 (2013.01); C04B 2235/3205 (2013.01); C04B 2235/3826 (2013.01); C04B 2235/3839 (2013.01); C04B 2235/425 (2013.01); C04B 2235/722 (2013.01); C04B 2235/76 (2013.01); C04B 2235/9661 (2013.01); G02F 1/0063 (2013.01); H01L 29/36 (2013.01);
Abstract

An optical device includes a vanadium compensated, high resistivity, SiC single crystal of 6H or 4H polytype, for transmitting light having a wavelength in a range of from 420 nm to 4.5 μm. The device may include a window, lens, prism, or waveguide. A system includes a source for generating light having a wavelength in a range of from 420 nm to 4.5 μm, and a device for receiving and transmitting the light, where the device includes a vanadium compensated, high resistivity, SiC single crystal of 6H or 4H polytype. The disclosure also relates to crystals and methods for optical applications, including an aluminum doped SiC crystal having residual nitrogen and boron impurities, where the aluminum concentration is greater than the combined concentrations of nitrogen and boron, and where an optical absorption coefficient is less than about 0.4 cmat a wavelength between about 400 nm to about 800 nm.


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