This inventor holds 1 USPTO granted patent. Top assignee: Ii-Vi Advanced Materials, LLC. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Iiya Zwieback: Innovator in Silicon Carbide Crystal Growth
Introduction
Iiya Zwieback is a notable inventor based in Township Of Washington, NJ (US). He has made significant contributions to the field of materials science, particularly in the growth of silicon carbide (SiC) single crystals. His innovative work has led to the development of a patented method that enhances the efficiency and quality of SiC crystal production.
Latest Patents
Iiya Zwieback holds a patent for "Large diameter silicon carbide single crystals and apparatus and method of manufacture thereof." This patent describes an apparatus and method for growing SiC single crystals using a PVT growth apparatus. The process involves a single crystal SiC seed and a SiC source material positioned in a growth crucible. A resistance heater is utilized to heat the crucible, causing the SiC source material to sublime and transport to the single crystal SiC seed, where it condenses to form a growing SiC single crystal. The method ensures a flat isotherm at the growth interface, which is crucial for producing high-quality crystals.
Career Highlights
Iiya Zwieback is currently employed at Ii-Vi Advanced Materials, LLC, where he continues to advance his research in materials science. His work at the company focuses on developing innovative solutions for semiconductor materials, which are essential for various electronic applications. His expertise in crystal growth has positioned him as a key contributor to the field.
Collaborations
Iiya has collaborated with several talented individuals in his field, including Xueping Xu and Avinash Gupta. These collaborations have fostered a productive environment for innovation and have led to advancements in the technology surrounding silicon carbide materials.
Conclusion
Iiya Zwieback's contributions to the field of silicon carbide crystal growth exemplify the impact of innovative thinking in materials science. His patented methods and ongoing work at Ii-Vi Advanced Materials, LLC highlight his commitment to advancing technology in this critical area.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile