Avinash Gupta

Title: Avinash Gupta: Innovator in Silicon Carbide Technology

Introduction

Avinash Gupta is a notable inventor based in Basking Ridge, NJ (US). He has made significant contributions to the field of materials science, particularly in the development of silicon carbide (SiC) technologies. His innovative work has led to the patenting of a unique method for growing large diameter silicon carbide single crystals.

Latest Patents

Avinash Gupta holds a patent for "Large diameter silicon carbide single crystals and apparatus and method of manufacture thereof." This patent describes an apparatus and method for growing a SiC single crystal using a PVT growth apparatus. The process involves positioning a single crystal SiC seed and a SiC source material in a growth crucible, where a resistance heater facilitates the sublimation of the SiC source material. The sublimated material is then transported to the single crystal SiC seed, where it condenses to form a growing SiC single crystal. The method ensures a flat isotherm at the growth interface, enhancing the quality of the resulting crystal.

Career Highlights

Avinash Gupta is currently employed at Ii-VI Advanced Materials, LLC, where he continues to advance his research in silicon carbide technologies. His work is pivotal in the development of high-performance materials that have applications in various industries, including electronics and photonics.

Collaborations

Some of his notable coworkers include Xueping Xu and Ilya Zwieback, who collaborate with him on various projects related to materials science and engineering.

Conclusion

Avinash Gupta's contributions to the field of silicon carbide technology exemplify the impact of innovative thinking in materials science. His patented methods and ongoing research continue to pave the way for advancements in high-performance materials.