For the Inventor, By the Inventor

Enter assignee name

Great Power Semiconductor Corp.

Calculating rank

USPTO Granted Patents = 16

% Expired Patents = 31.3

Forward Citations = 14

Loading Chart...

Loading Chart...

8 inventors (with patents filed for the assignee):

Hsiu Wen Hsu (7 out of 10 patents)

Kao-Way Tu (4 out of 11 patents)

Chun Ying Yeh (4 out of 7 patents)

4. Chun-Ying Yeh (3 out of 17 patents)

5. Hsiu-Wen Hsu (2 out of 33 patents)

6. Yuan-Shun Chang (2 out of 9 patents)

7. Yuan-Ming Lee (1 out of 10 patents)

8. Yi-Yun Tsai (1 out of 5 patents)

16 patents: Sort by Forward Citations

1. 9214531 - Trenched power MOSFET with enhanced breakdown voltage and fabrication method thereof (2015-12-15),

2. 8975691 - Trenched power MOSFET with enhanced breakdown voltage and fabrication method thereof (2015-03-10),

3. 8900950 - Trench power MOSFET structure with high cell density and fabrication method thereof (2014-12-02),

4. 8872265 - Trench power MOSFET and fabrication method thereof (2014-10-28),

5. 8846469 - Fabrication method of trenched power semiconductor device with source trench (2014-09-30),

6. 8735249 - Trenched power semiconductor device and fabrication method thereof (2014-05-27),

7. 8569134 - Method to fabricate a closed cell trench power MOSFET structure (2013-10-29),

8. 8525256 - Power semiconductor structure with schottky diode (2013-09-03),

9. 8445958 - Power semiconductor device with trench bottom polysilicon and fabrication method thereof (2013-05-21),

10. 8421149 - Trench power MOSFET structure with high switching speed and fabrication method thereof (2013-04-16),

11. 8357952 - Power semiconductor structure with field effect rectifier and fabrication method thereof (2013-01-22),

12. 8354315 - Fabrication method of a power semicondutor structure with schottky diode (2013-01-15),

13. 8304828 - Closed cell trench power MOSFET structure (2012-11-06),

14. 8153490 - Fabrication method of power semiconductor structure with reduced gate impedance (2012-04-10),

15. 8080457 - Fabrication method of power semiconductor structure with low gate charge (2011-12-20),

Company Overview

Great Power Semiconductor Corp. is a leading innovator in the semiconductor industry, specializing in the design and manufacture of advanced power management solutions. The company focuses on developing high-efficiency power devices and integrated circuits that cater to various applications, including consumer electronics, automotive systems, and industrial automation. Headquartered in Taipei, Taiwan, Great Power Semiconductor is committed to driving technological advancements and enhancing energy efficiency across multiple sectors.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 27 2026

16 Patents

#255 in Taipei

#998 in Taiwan

#37,887 in the World

Great Power Semiconductor Corp.

Forward Citations = 14

8 inventors:

Hsiu Wen Hsu (7 out of 10 patents)

Kao-Way Tu (4 out of 11 patents)

Chun Ying Yeh (4 out of 7 patents)

4. Chun-Ying Yeh (3 out of 17 patents)

5. Hsiu-Wen Hsu (2 out of 33 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Great Power Semiconductor Corp.. Retrieved from https://idiyas.com/company/great-power-semiconductor

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

Loading…