Chun Ying Yeh

Title: Innovations of Chun Ying Yeh

Introduction

Chun Ying Yeh is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of seven patents. His work focuses on advanced fabrication methods and power semiconductor structures.

Latest Patents

One of his latest patents is a fabrication method of a trenched power semiconductor device with a source trench. This innovative method involves forming at least two gate trenches in a base, followed by the sequential formation of a dielectric layer and a polysilicon structure within the gate trench. A source trench is then created between the neighboring gate trenches, and a second polysilicon structure is formed in the lower portion of the source trench. The process concludes with the filling of a conductive structure into the source trench to establish electrical connections. Another notable patent is for a power semiconductor structure with a Schottky diode. This patent details the formation of a gate structure and the implantation of dopants into the silicon substrate to create a body and source region. A dielectric layer is then deposited, and a metal layer is filled to connect the source and drain regions.

Career Highlights

Chun Ying Yeh has worked with notable companies in the semiconductor industry, including Great Power Semiconductor Corporation and Niko Semiconductor Co., Ltd. His experience in these organizations has contributed to his expertise in semiconductor fabrication and design.

Collaborations

Chun Ying Yeh has collaborated with Hsiu Wen Hsu, a talented woman in the field, further enhancing his innovative work in semiconductor technology.

Conclusion

Chun Ying Yeh's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His innovative methods and structures continue to influence advancements in power semiconductor devices.