The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2012
Filed:
May. 31, 2011
Applicant:
Chun Ying Yeh, Hsinchu, TW;
Inventor:
Chun Ying Yeh, Hsinchu, TW;
Assignee:
Niko Semiconductor Co., Ltd., Taipei, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A fabrication method of a trenched metal-oxide-semiconductor device is provided. Firstly, an epitaxial layer is formed on a substrate. Then, a plurality of gate trenches is formed in the epitaxial layer. Afterward, a spacer is formed on the sidewall of the trench gates. The spacer is utilized as a mask to selectively implant oxygen ion into the bottom of the gate trenches so as to form a bottom oxide layer on the bottom of the gate trenches to reduce capacitance between gate and drain.