The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2011
Filed:
May. 11, 2010
Hsiu Wen Hsu, Hsinchu County, TW;
Chun Ying Yeh, Hsinchu, TW;
Hsiu Wen Hsu, Hsinchu County, TW;
Chun Ying Yeh, Hsinchu, TW;
Great Power Semiconductor Corp., Taipei County, TW;
Abstract
A fabrication method of a trenched power semiconductor structure with a schottky diode is provided. Firstly, a drain region is formed in a substrate. Next, at least two gate structures are formed above the drain region, and then, a body and at least a source region are formed between the two adjacent gate structures. Thereafter, a first dielectric structure is formed on the gate structure to shield the gate structure. Then, a contact window is formed in the body and has side surface thereof adjacent to the source region to expose the source region. Afterward, a second dielectric structure is formed in the contact window. Next, by using the second dielectric structure as an etching mask, the body is etched to form a narrow trench extending to the drain region below the body. Finally, a metal layer is filled into the contact window and the narrow trench.