The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2013
Filed:
Apr. 08, 2011
Kao-way Tu, New Taipei, TW;
Kao-Way Tu, New Taipei, TW;
Great Power Semiconductor Corp., New Taipei, TW;
Abstract
A power semiconductor device comprising a base, a trench, a heavily doped polysilicon structure, a polysilicon gate, a gate dielectric layer, and a heavily doped region is provided. The trench is formed in the base. The heavily doped polysilicon structure is formed in the lower portion of the trench. At least a side surface of the heavily doped polysilicon structure touches the naked base. The polysilicon gate is located in the upper portion of the trench. The gate dielectric layer is interposed between the polysilicon gate and the heavily doped polysilicon structure. The dopants in the heavily doped polysilicon structure are diffused outward to form a heavily doped region.