The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2013
Filed:
Apr. 07, 2011
Applicant:
Kao-way Tu, New Taipei, TW;
Inventor:
Kao-Way Tu, New Taipei, TW;
Assignee:
Great Power Semiconductor Corp., New Taipei, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/332 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A power semiconductor structure with a field effect rectifier having a drain region, a body region, a source region, a gate channel, and a current channel is provided. The body region is substantially located above the drain region. The source region is located in the body region. The gate channel is located in the body region and adjacent to a gate structure. The current channel is located in the body region and is extended from the source region downward to the drain region. The current channel is adjacent to a conductive structure coupled to the source region.