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Hsinchu, Taiwan

Advanced Ion Beam Technology, Inc.

USPTO Granted Patents = 79

% Expired Patents = 5.1

Trademarks = 2

Forward Citations = 279

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71 inventors (with patents filed for the assignee):

Zhimin Wan (29 out of 31 patents)

Jiong Chen (18 out of 25 patents)

Cheng-Hui Shen (8 out of 7 patents)

4. Daniel Tang (7 out of 19 patents)

5. John D Pollock (7 out of 22 patents)

6. Nicholas R White (7 out of 16 patents)

7. Yu-Ho Ni (6 out of 6 patents)

8. Erik Collart (5 out of 5 patents)

9. Kourosh Saadatmand (5 out of 17 patents)

10. Richard F McRay (5 out of 5 patents)

11. Tzu-Shih Yen (5 out of 15 patents)

12. Ko-Chuan Jen (5 out of 5 patents)

13. Don Berrian (5 out of 5 patents)

14. Wei-Cheng Lin (4 out of 205 patents)

15. Xiao Bai (4 out of 5 patents)

Core Competencies:

Ion Implantation

Wafer Temperature Measurement

Beam Control Assembly

Particle Contamination

Magnetic Field Fluctuation

FinFET Fabrication

Doping Method

Multi-Energy Ion Implantation

Electrostatic Chuck

Ion Implanter

Deceleration Apparatus

Gas Mixture Method

79 patents: Sort by Forward Citations

1. 12170182 - Ribbon beam angle adjustment in an ion implantation system (2024-12-17),

2. 11942343 - Wafer temperature measurement in an ion implantation system (2024-03-26),

3. 11600464 - Apparatus and method for reduction of particle contamination by bias voltage (2023-03-07),

4. 11430589 - Hybrid magnet structure (2022-08-30),

5. 11349414 - Apparatus and method for monitoring the relative relationship between the wafer and the chuck (2022-05-31),

6. 11062926 - Wafer charges monitoring (2021-07-13),

7. 10984524 - Calibration system with at least one camera and method thereof (2021-04-20),

8. 10804821 - Apparatus and method for monitoring the relative relationship between the wafer and the chuck (2020-10-13),

9. 10699876 - Method of cleaning electrostatic chuck (2020-06-30),

10. 10475678 - Wafer charges monitoring (2019-11-12),

11. 10361059 - Magnetic field fluctuation for beam smoothing (2019-07-23),

12. 9852887 - Ion source of an ion implanter (2017-12-26),

13. 9824850 - Deceleration apparatus for ribbon and spot beams (2017-11-21),

14. 9748072 - Lower dose rate ion implantation using a wider ion beam (2017-08-29),

15. 9697988 - Ion implantation system and process (2017-07-04),

Company Overview

Advanced Ion Beam Technology, Inc., based in Hsinchu, Taiwan, specializes in ion implantation technology, a critical process in semiconductor manufacturing. The company focuses on developing advanced solutions for wafer temperature measurement, beam control assembly, and innovative doping methods. Their expertise extends to addressing challenges such as particle contamination and magnetic field fluctuations, which are vital for the fabrication of FinFET devices and multi-energy ion implantation processes. Through its cutting-edge technologies, the company plays a significant role in enhancing semiconductor performance and reliability.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 13 2026

79 Patents

#73 in Hsinchu

#280 in Taiwan

#9,582 in the World

Hsinchu, Taiwan

Advanced Ion Beam Technology, Inc.

Forward Citations = 279

71 inventors:

Zhimin Wan (29 out of 31 patents)

Jiong Chen (18 out of 25 patents)

Cheng-Hui Shen (8 out of 7 patents)

4. Daniel Tang (7 out of 19 patents)

5. John D Pollock (7 out of 22 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Advanced Ion Beam Technology, Inc.. Retrieved from https://idiyas.com/company/advanced-ion-beam-technology

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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