Sunnyvale, CA, United States of America

Zhimin Wan

This inventor holds 31 USPTO granted patents and 3 published patent applications, primarily in Ion Implantation Technology. Top assignees: Advanced Ion Beam Technology, Inc., Advanced Optical Solutions, Inc., Axchlisrtechnologies, Inc.. Active years: 2001-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zhimin Wan. Retrieved from https://idiyas.com/inventor/zhimin-wan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 31 

% Patents Active = 90.3

Average Co-Inventor Count = 2.5

ph-index = 5

Forward Citations = 67(Granted Patents)


Location History:

  • San Jose, CA (US) (2001)
  • Sunnyvale, CA (US) (2003 - 2019)

Company Filing History:


Years Active: 2001-2019

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Areas of Expertise:
Ion Implantation
Beam Smoothing
Multi-Energy
FinFET Devices
Wafer Scanning
Ion Source
Dose Rate Control
Thin Film Deposition
Ion Beam Current
Gas Mixture Method
Temperature Control
Adjusting Ion Beam
31 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Zhimin Wan

Introduction

Zhimin Wan, based in Sunnyvale, CA, is a prominent inventor with an impressive portfolio of 31 patents. His work primarily focuses on advancements in ion implantation technology, significantly impacting the field of semiconductor manufacturing. Wan’s innovative approaches to ion beam profiling and ion source design demonstrate his commitment to improving dosage uniformity and efficiency in various applications.

Latest Patents

Among his latest contributions, Wan has developed a patent for "Magnetic Field Fluctuation for Beam Smoothing." This innovation addresses the challenges associated with noise and irregular peaks in ion beam profiles. By employing auxiliary magnetic field devices, which generate a fluctuating magnetic field along the ion beam path, Wan’s method aims to produce a more uniform ion dose. This technology could greatly enhance the reliability of ion implantation processes.

Additionally, Wan has patented an "Ion Source of an Ion Implanter." This invention utilizes induction coils to create an alternating magnetic field that couples RF/VHF power into a plasma. The unique configuration of excitation coils, strategically positioned near the extraction slit, allows for enhanced control of plasma dynamics. Incorporating conducting shields further optimizes the ion source's performance by minimizing capacitive coupling, leading to improved ion generation capabilities.

Career Highlights

Throughout his career, Zhimin Wan has worked with several notable companies, including Advanced Ion Beam Technology, Inc. and Advanced Optical Solutions, Inc. His expertise in ion beam technology has been instrumental in advancing the capabilities of these organizations in the semiconductor industry. Wan’s dedication to research and development has not only benefited his employers but has also contributed to the broader field of ion implantation.

Collaborations

Wan has had the opportunity to collaborate with esteemed colleagues such as John D. Pollock and Erik Collart. These partnerships have fostered an environment of innovation and creative problem-solving, enabling Wan to push the boundaries of what is possible in ion implantation technology. Such collaborations highlight the importance of teamwork in driving technological advancements and nurturing groundbreaking ideas.

Conclusion

Zhimin Wan’s prolific contributions to the field of ion beam technology underscore his status as a leading innovator in the industry. With 31 patents to his name and a commitment to improving ion implantation processes, his work continues to inspire future advancements in semiconductor manufacturing. As technologies evolve, Wan’s inventions will undoubtedly play a crucial role in shaping the future of the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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