The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
Jun. 26, 2015
Advanced Ion Beam Technology, Inc., Hsinchu, TW;
Zhimin Wan, Sunnyvale, CA (US);
Kourosh Saadatmand, Merrimac, MA (US);
Wilhelm P. Platow, Salem, MA (US);
Ger-Pin Lin, Tainan, TW;
Ching-I Li, Tainan, TW;
Rekha Padmanabhan, Sunnyvale, CA (US);
Gary N. Cai, Grandview, MO (US);
ADVANCED ION BEAM TECHNOLOGY, INC., Hsinchu, TW;
Abstract
A method for an ion implantation is provided. First, a non-parallel ion beam is provided. Thereafter, a relative motion between a workpiece and the non-parallel ion beam, so as to enable each region of the workpiece to be implanted by different portions of the non-parallel ion beam successively. Particularly, when at least one three-dimensional structure is located on the upper surface of the workpiece, both the top surface and the side surface of the three-dimensional structure may be implanted properly by the non-parallel ion beam when the workpiece is moved across the non-parallel ion beam one and only one times. Herein, the non-parallel ion beam can be a divergent ion beam or a convergent ion beam (both may be viewed as the integrated divergent beam), also can be generated directly from an ion source or is modified from a parallel ion beam, a divergent ion beam or a convergent ion beam.